may 2010 ?2010 fairchild semiconductor corporation FDMC86324 rev.c www.fairchildsemi.com 1 FDMC86324 n-channel power trench ? mosfet FDMC86324 n-channel power trench ? mosfet 80 v, 20 a, 23 m features ? max r ds(on) = 23 m at v gs = 10 v, i d = 7 a ? max r ds(on) = 37 m at v gs = 6 v, i d = 4 a ? low profile - 1 mm max in power 33 ? 100% uil tested ? rohs compliant general description this n-channel mosfet is produced using fairchild semiconductor?s advanced power trench ? process that has been especially tailored to minimi ze the on-state resistance and yet maintain superior switching performance. application ? dc - dc conversion mosfet maximum ratings t a = 25 c unless otherwise noted thermal characteristics package marking and ordering information symbol parameter ratings units v ds drain to source voltage 80 v v gs gate to source voltage 20 v i d drain current -continuous (package limited) t c = 25 c 20 a -continuous (silicon limited) t c = 25 c 30 -continuous t a = 25 c (note 1a) 7 -pulsed 30 e as single pulse avalanche energy (note 3) 72 mj p d power dissipation t c = 25 c 41 w power dissipation t a = 25 c (note 1a) 2.3 t j , t stg operating and storage junction temperature range -55 to +150 c r jc thermal resistance, junction to case 3 c/w r ja thermal resistance, junction to ambient (note 1a) 53 device marking device package reel size tape width quantity FDMC86324 FDMC86324 power 33 13?? 12 mm 3000 units g s s s d d d d 5 6 7 8 3 2 1 4 top power 33 bottom d d d d s s s g pin 1
FDMC86324 n-channel power trench ? mosfet www.fairchildsemi.com 2 FDMC86324 rev.c electrical characteristics t j = 25 c unless otherwise noted symbol parameter test conditions min typ max units off characteristics bv dss drain to source breakdown voltage i d = 250 p a, v gs = 0 v 80 v ' bv dss ' t j breakdown voltage temperature coefficient i d = 250 p a, referenced to 25 c 69 mv/ c i dss zero gate voltage drain current v ds = 64 v, v gs = 0 v 1 p a i gss gate to source leakage current v gs = 20 v, v ds = 0 v 100 na on characteristics v gs(th) gate to source threshold voltage v gs = v ds , i d = 250 p a 2.0 3.1 4.0 v ' v gs(th) ' t j gate to source threshold voltage temperature coefficient i d = 250 p a, referenced to 25 c -9 mv/ c r ds(on) static drain to source on resistance v gs = 10 v, i d = 7 a 19.1 23 m : v gs = 6 v, i d = 4 a 25.5 37 v gs = 10 v, i d = 7 a, t j = 125 c 32.5 40 g fs forward transconductance v dd = 10 v, i d = 7 a 19 s dynamic characteristics c iss input capacitance v ds = 50 v, v gs = 0 v, f = 1 mhz 725 965 pf c oss output capacitance 175 235 pf c rss reverse transfer capacitance 15 25 pf r g gate resistance 0.5 : switching characteristics t d(on) turn-on delay time v dd = 50 v, i d = 7 a, v gs = 10 v, r gen = 6 : 8 17 ns t r rise time 4 10 ns t d(off) turn-off delay time 14 25 ns t f fall time 4 10 ns q g(tot) total gate charge v gs = 0 v to 10 v v dd = 50 v i d = 7 a 13 18 nc total gate charge v gs = 0 v to 5 v 8 11 nc q gs total gate charge 3.7 nc q gd gate to drain ?miller? charge 3.6 nc drain-source diod e characteristics v sd source to drain diode forward voltage v gs = 0 v, i s = 7 a (note 2) 0.81 1.3 v v gs = 0 v, i s = 2 a (note 2) 0.75 1.2 t rr reverse recovery time i f = 7 a, di/dt = 100 a/ p s 44 70 ns q rr reverse recovery charge 40 65 nc notes: 1. r t ja is determined with the device mounted on a 1in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of fr-4 material. r t jc is guaranteed by design while r t ca is determined by the user's board design. 2. pulse test: pulse width < 300 p s, duty cycle < 2.0 %. 3. starting t j = 25 o c; n-ch: l = 1 mh, i as = 12 a, v dd = 72 v, v gs = 10 v. 53 c/w when mounted on a 1 in 2 pad of 2 oz copper 125 c/w when mounted on a minimum pad of 2 oz copper a. b.
FDMC86324 n-channel power trench ? mosfet www.fairchildsemi.com 3 FDMC86324 rev.c typical characteristics t j = 25 c unless otherwise noted figure 1. 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 5 10 15 20 25 30 v gs = 6 v v gs = 10 v v gs = 5 v v gs = 5.5 v pulse duration = 80 p s duty cycle = 0.5% max v gs = 4.5 v i d , drain current (a) v ds , drain to source voltage (v) on-region characteristics figure 2. 0 5 10 15 20 25 30 0 1 2 3 4 5 v gs = 6 v v gs = 4.5 v normalized drain to source on-resistance i d , drain current (a) v gs = 10 v v gs = 5.5 v v gs = 5 v pulse duration = 80 p s duty cycle = 0.5% max n o r m a l i z e d o n - r e s i s t a n c e vs drain current and gate voltage f i g u r e 3 . n o r m a l i z e d o n - r e s i s t a n c e -75 -50 -25 0 25 50 75 100 125 150 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 i d = 7 a v gs = 10 v normalized drain to source on-resistance t j , junction temperature ( o c ) vs junction temperature figure 4. 45678910 10 20 30 40 50 60 70 80 t j = 125 o c i d = 7 a t j = 25 o c v gs , gate to source voltage (v) r ds(on) , drain to source on-resistance ( m : ) pulse duration = 80 p s duty cycle = 0.5% max o n - r e s i s t a n c e v s g a t e t o source voltage figure 5. transfer characteristics 234567 0 5 10 15 20 25 30 t j = 150 o c v ds = 5 v pulse duration = 80 p s duty cycle = 0.5% max t j = -55 o c t j = 25 o c i d , drain current (a) v gs , gate to source voltage (v) figure 6. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.001 0.01 0.1 1 10 60 t j = -55 o c t j = 25 o c t j = 150 o c v gs = 0 v i s , reverse drain current (a) v sd , body diode forward voltage (v) s o u r c e t o d r a i n d i o d e forward voltage vs source current
FDMC86324 n-channel power trench ? mosfet www.fairchildsemi.com 4 FDMC86324 rev.c figure 7. 02468101214 0 2 4 6 8 10 i d = 7 a v dd = 50 v v dd = 25 v v gs , gate to source voltage (v) q g , gate charge (nc) v dd = 75 v gate charge characteristics figure 8. 0.1 1 10 80 10 100 1000 f = 1 mhz v gs = 0 v capacitance (pf) v ds , drain to source voltage (v) c rss c oss c iss c a p a c i t a n c e v s d r a i n to source voltage figure 9. 0.01 0.1 1 10 30 1 2 3 4 5 6 7 8 9 10 t j = 100 o c t j = 25 o c t j = 125 o c t av , time in avalanche (ms) i as , avalanche current (a) u n c l a m p e d i n d u c t i v e switching capability figure 10. 25 50 75 100 125 150 0 5 10 15 20 25 30 limited by package r t jc = 3 o c/w v gs = 6 v v gs = 10 v i d , drain current (a) t c , case temperature ( o c ) m a x i m u m c o n t i n u o u s d r a i n c u r r e n t v s c a s e t e m p e r a t u r e figure 11. 0.01 0.1 1 10 100 500 0.01 0.1 1 10 50 1 s 100 p s dc 100 ms 10 ms 1 ms 10 s i d , drain current (a) v ds , drain to source voltage (v) this area is limited by r ds(on) single pulse t j = max rated r t ja = 125 o c/w t a = 25 o c fo rw ard bi as safe operating area figure 12. 10 -4 10 -3 10 -2 10 -1 110 100 1000 0.5 1 10 100 1000 v gs = 10 v p ( pk ) , peak transient power (w) t, pulse width (sec) single pulse r t ja = 125 o c/w t a = 25 o c s i n g l e p u l s e m a x i m u m power dissipation typical characteristics t j = 25 c unless otherwise noted
FDMC86324 n-channel power trench ? mosfet www.fairchildsemi.com 5 FDMC86324 rev.c figure 13. junction-to-ambient transient thermal response curve 10 -4 10 -3 10 -2 10 -1 11 0 100 1000 0.001 0.01 0.1 1 single pulse r t ja = 125 o c/w duty cycle-descending order normalized thermal impedance, z t ja t, rectangular pulse duration (sec) d = 0.5 0.2 0.1 0.05 0.02 0.01 2 p dm t 1 t 2 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z t ja x r t ja + t a typical characteristics t j = 25 c unless otherwise noted
FDMC86324 n-channel power trench ? mosfet www.fairchildsemi.com 6 FDMC86324 rev.c dimensional outline and pad layout
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